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mtd: vf610_nfc: use in-band bad block table 

Use in-band bad block table (NAND_BBT_NO_OOB) which allows to
use the full OOB for hardare ECC purposes. Since there is no
ECC correction on the OOB it is also safer to use in-band area
to store the bad block table marker.

Signed-off-by: Stefan Agner <stefan@agner.ch>
This commit is contained in:
Stefan Agner 2015-05-08 19:07:10 +02:00 committed by Scott Wood
parent 5dec286b82
commit 84d656a283
1 changed files with 2 additions and 27 deletions
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29
drivers/mtd/nand/vf610_nfc.c
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@ -155,29 +155,6 @@ struct vf610_nfc {
#define mtd_to_nfc(_mtd) \
(struct vf610_nfc *)((struct nand_chip *)_mtd->priv)->priv
static u8 bbt_pattern[] = {'B', 'b', 't', '0' };
static u8 mirror_pattern[] = {'1', 't', 'b', 'B' };
static struct nand_bbt_descr bbt_main_descr = {
.options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE |
NAND_BBT_2BIT | NAND_BBT_VERSION,
.offs = 11,
.len = 4,
.veroffs = 15,
.maxblocks = 4,
.pattern = bbt_pattern,
};
static struct nand_bbt_descr bbt_mirror_descr = {
.options = NAND_BBT_LASTBLOCK | NAND_BBT_CREATE | NAND_BBT_WRITE |
NAND_BBT_2BIT | NAND_BBT_VERSION,
.offs = 11,
.len = 4,
.veroffs = 15,
.maxblocks = 4,
.pattern = mirror_pattern,
};
static struct nand_ecclayout vf610_nfc_ecc45 = {
.eccbytes = 45,
.eccpos = {19, 20, 21, 22, 23,
@ -624,10 +601,8 @@ static int vf610_nfc_nand_init(int devnum, void __iomem *addr)
/* Bad block options. */
if (cfg.flash_bbt)
chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_CREATE;
chip->bbt_td = &bbt_main_descr;
chip->bbt_md = &bbt_mirror_descr;
chip->bbt_options = NAND_BBT_USE_FLASH | NAND_BBT_NO_OOB |
NAND_BBT_CREATE;
/* Set configuration register. */
vf610_nfc_clear(mtd, NFC_FLASH_CONFIG, CONFIG_ADDR_AUTO_INCR_BIT);